Experimental Study of the NIEL Scaling for Silicon Devices

Nuns, T.; Inguimbert, C.; Soonckindt, S.; Dryer, B.; Buggey, T. and Poivey, C. (2018). Experimental Study of the NIEL Scaling for Silicon Devices. In: 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS), IEEE.

DOI: https://doi.org/10.1109/radecs45761.2018.9328677

Abstract

This paper proposes some new experimental data comparing the damage factor of silicon devices with the NIEL after electron, proton and gamma irradiations. The results show that the measured damage factors fit better with the “effective” NIEL, an alternative model of displacement damage effects, than with the classical one.

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