Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain

Stefanov, Konstantin D. and Prest, Martin J. (2023). Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain. IEEE Transactions on Electron Devices, 70(6) pp. 3136–3139.

DOI: https://doi.org/10.1109/ted.2023.3266711

Abstract

We present an imaging pixel featuring dual conversion gain in a single exposure based on the pinned photodiode (PPD). The signal charge is first converted to voltage nondestructively using a floating gate, and a second conversion is done at a p-n junction-based sense node (SN). Higher signal dynamic range (DR) is achieved due to the sensing of the same charge with two different conversion gains. The results from a prototype 10- μ m-pitch pixel manufactured in a 180-nm CMOS image sensor process demonstrate a gain ratio of 3, DR of 90 dB, 3.6 e − rms readout noise, and negligible image lag.

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