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Wocial, Thomas; Stefanov, Konstantin D.; Martin, William E.; Barnes, John R. and Jones, Hugh R.A.
(2022).
DOI: https://doi.org/10.1109/jsen.2022.3211152
Abstract
We present a readout scheme for CMOS image sensors that can be used to achieve arbitrarily high dynamic range (HDR) in principle. The linear full well capacity (LFWC) in high signal regions was extended 50 times from 20 ke− to 984 ke− via an interlaced row-wise readout order, whilst the noise floor remained unchanged in low signal regions, resulting in a 34 dB increase in DR. The peak signal-to-noise ratio (PSNR) is increased in a continuous fashion from 43 dB to 60 dB. This was achieved by summing user-selected rows which were read out multiple times. Centroiding uncertainties were lowered when template-fitting a projected pattern, compared to the standard readout scheme. Example applications are aimed at scientific imaging due to the linearity and PSNR increase.
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About
- Item ORO ID
- 85569
- Item Type
- Journal Item
- ISSN
- 1558-1748
- Keywords
- Dynamic range; CMOS; image sensor; row-wise; local integration time; random addressing
- Academic Unit or School
-
Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM) - Research Group
- Centre for Electronic Imaging (CEI)
- Copyright Holders
- © IEEE
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