Effect of hydrostatic pressure on the fragmented conduction band structure of dilute Ga(AsN) alloys

Endicott, J.; Patanè, A.; Maude, D.; Eaves, L.; Hopkinson, M. and Hill, G. (2005). Effect of hydrostatic pressure on the fragmented conduction band structure of dilute Ga(AsN) alloys. Physical Review B, 72(4)

DOI: https://doi.org/10.1103/PhysRevB.72.041306

Abstract

We show that the combined use of magneto-tunneling spectroscopy and hydrostatic pressure P provides a powerful means of probing and strongly modifying the fragmented conduction band structure of dilute GaAs_1−yNy quantum well layers. We demonstrate the strong effect of pressure on the GaAs_1−yNy states over a wide range of energies and k vectors not accessible in previous optical investigations of interband transitions around k=0. Also, we report a large pressure coefficient for the effective mass, m, of the conduction electrons, ∂m∕∂P≈3×10⁻³m_e kbar⁻¹, nearly an order of magnitude larger than that found in GaAs (∂m∕∂P≈4×10⁻⁴m_e kbar⁻¹, where m_e is the electron mass in vacuum).

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