Magnetotunneling Spectroscopy of Dilute Ga(AsN) Quantum Wells

Endicott, J.; Patanè, A.; Ibáñez, J.; Eaves, L.; Bissiri, M.; Hopkinson, M.; Airey, R. and Hill, G. (2003). Magnetotunneling Spectroscopy of Dilute Ga(AsN) Quantum Wells. Physical Review Letters, 91(12), article no. 126802.

DOI: https://doi.org/10.1103/PhysRevLett.91.126802

Abstract

We use magnetotunneling spectroscopy to explore the admixing of the extended GaAs conduction band states with the localized N-impurity states in dilute GaAs_1−yN_y quantum wells. In our resonant tunneling diodes, electrons can tunnel into the N-induced E₋ and E₊ subbands in a GaAs_1−yN_y quantum well layer, leading to resonant peaks in the current-voltage characteristics. By varying the magnetic field applied perpendicular to the current direction, we can tune an electron to tunnel into a given k state of the well; since the applied voltage tunes the energy, we can map out the form of the energy-momentum dispersion curves of E₋ and E₊. The data reveal that for a small N content (∼0.1%) the E₋ and E₊ subbands are highly nonparabolic and that the heavy effective mass E₊ states have a significant Γ-conduction band character even at k=0.

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