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Heymes, Julian; Soman, Matthew; Buggey, Thomas; Crews, Chiaki; Randall, George; Gottwald, Alexander; Harris, Andrew; Kelt, Andrew; Kroth, Udo; Moody, Ian; Meng, Xiao; Ogor, Oskar and Holland, Andrew
(2020).
DOI: https://doi.org/10.1117/12.2559711
Abstract
Teledyne-e2v's sensors and wafer-scale processing are widely used for high performance imaging across soft X-ray and optical bands. In the ultraviolet spectral range, the combination of short absorption lengths (below 10 nm) and high reflectance (up to 75 %) can strongly limit the quantum efficiency. Direct detection capability relies on back-illumination and back-thinning processes to be applied to a sensor to remove dead layers from the optical path. As the thinning process leaves an unacceptably thick backside potential well as well as a highly reflective surface, in-house ultraviolet-specific (e.g. for WUVS) or third-party processes (e.g. delta-doping for FIREBall) are required.
We have calibrated Teledyne-e2v's latest in-house wafer-scale proprietary processes with monochromatic synchrotron radiation over a wide spectral range in the ultraviolet domain (λ=40 nm – 400 nm) at the Metrology Light Source of the Physikalisch-Technische Bundesanstalt. The first process is a shallow p+ implantation that permits the thinning of the backside potential well. It is available in two different levels: basic and enhanced. The second type of enhancement is a specific anti-reflective coating to increase the back-surface transmittance for distinct spectral ranges.
In this paper, we will present comparative quantum efficiency calibration of both passivation stages and of two different ultraviolet specific anti-reflective coatings (applied on enhanced passivation devices). Also, their stability after intense ultraviolet illumination will be shown. These measurements will permit Teledyne-e2v to extend the quantum efficiency data of their most recent processes across the soft X-ray to near-infrared spectrum.
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