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Ivory, James; Stefanov, Konstantin D. and Holland, Andrew D.
(2020).
DOI: https://doi.org/10.1117/12.2562529
Abstract
A new method for minimizing image lag due to charge spill-back has been developed for pinned photodiode CMOS image sensors. The proposed method involves the use of multi-level transfer gate voltage during a single charge transfer period. Measurement results show that the new transfer process maintains the lower values for image lag at low signal levels that a high transfer gate voltage grants, whilst simultaneously preserving the later onset of spill-back dominated lag that a lower transfer gate voltage allows.
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About
- Item ORO ID
- 74611
- Item Type
- Conference or Workshop Item
- Keywords
- CMOS; transfer gate voltage; charge spillback; image lag
- Academic Unit or School
-
Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM) - Research Group
-
Centre for Electronic Imaging (CEI)
?? space ?? - Copyright Holders
- © 2020 Society of Photo-Optical Instrumentation Engineers (SPIE)
- Depositing User
- Konstantin Stefanov