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Goolaup, S.; Ramu, M.; Murapaka, C. and Lew, W. S.
(2015).
DOI: https://doi.org/10.1038/srep09603
Abstract
Domain wall (DW) based logic and memory devices require precise control and manipulation of DW in nanowire conduits. The topological defects of Transverse DWs (TDW) are of paramount importance as regards to the deterministic pinning and movement of DW within complex networks of conduits. In-situ control of the DW topological defects in nanowire conduits may pave the way for novel DW logic applications. In this work, we present a geometrical modulation along a nanowire conduit, which allows for the topological rectification/inversion of TDW in nanowires. This is achieved by exploiting the controlled relaxation of the TDW within an angled rectangle. Direct evidence of the logical operation is obtained via magnetic force microscopy measurement.
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About
- Item ORO ID
- 59804
- Item Type
- Journal Item
- ISSN
- 2045-2322
- Project Funding Details
-
Funded Project Name Project ID Funding Body NRF-CRP program (Non-volatile Magnetic Logic and Memory Integrated Circuit Devices NRF – CRP9 – 2011 – 01 Not Set - Academic Unit or School
-
Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM) - Depositing User
- Vikram Goolaup