A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD

Wood, D.; Hall, D.; Gow, J. P. D. and Holland, A. (2016). A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD. SPIE Proceedings: High Energy, Optical, and Infrared Detectors for Astronomy VII, 9915

DOI: https://doi.org/10.1117/12.2231682

Abstract

Radiation damage effects are problematic for space-based detectors. Highly energetic particles, predominantly from the sun can damage a detector and reduce its operational lifetime. For an image sensor such as a Charge-Coupled Device (CCD) impinging particles can potentially displace silicon atoms from the CCD lattice, creating defects which can trap signal charge and degrade an image through smearing. This paper presents a study of one energy level of the silicon divacancy defect using the technique of single trap-pumping on a proton irradiated n-channel CCD. The technique allows for the study of individual defects at a sub-pixel level, providing highly accurate data on defect parameters. Of particular importance when concerned with CCD performance is the emission time-constant of a defect level, which is the time-scale for which it can trap a signal charge. The trap-pumping technique is a direct probe of individual defect emission time-constants in a CCD, allowing for them to be studied with greater precision than possible with other defect analysis techniques such as deep-level transient spectroscopy on representative materials.

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