Microstructure–property relationships in thin film ITO

Giusti, G.; Tian, L.; Jones, I. P..; Abell, J. S. and Bowen, J. (2009). Microstructure–property relationships in thin film ITO. Thin Solid Films, 518(4) pp. 1140–1144.

DOI: https://doi.org/10.1016/j.tsf.2009.05.056

Abstract

Polycrystalline tin-doped indium oxide (ITO) thin films were prepared by pulsed laser deposition (PLD) with an ITO (In₂O₃-10 wt.% SnO₂) target and deposited on borosilicate glass substrates. By changing independently the deposition temperature and the oxygen pressure, a variety of microstructures were deposited. These different microstructures were mainly investigated not only by transmission electron microscopy (TEM) with cross-section and plan-view electron micrographs, but also by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction. Composition changes in ITO thin films grown under different deposition conditions were characterized by energy dispersive X-ray spectroscopy (EDX). The optical and electrical properties were studied respectively by UV-visible spectrophotometry and a four-point probe. The best compromise in terms of high transmittance (T) in the visible range and low resistivity (ρ) was obtained for films deposited between 0.66 and 2Pa oxygen pressure (P_O2) at 200 °C substrate temperature (T_s). The influence of P_O2 and T_son the microstructure and ITO film properties is discussed.

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