Dielectric properties of pulsed-laser deposited indium tin oxide thin films

Giusti, G.; Bowen, J.; Ramasse, Q.; Rey, G.; Blackburn, E.; Tian, L.; Jones, I. P. and Abell, J. S. (2012). Dielectric properties of pulsed-laser deposited indium tin oxide thin films. Thin Solid Films, 524 pp. 249–256.

DOI: https://doi.org/10.1016/j.tsf.2012.09.053

Abstract

Polycrystalline tin-doped indium oxide (ITO) thin films were prepared by Pulsed Laser Deposition with an ITO (In₂O₃-10 wt.% SnO₂) ceramic target and deposited on transparent borosilicate glass substrates between room temperature (RT) and 400 °C. The RT grown specimen was structurally investigated by Transmission Electron Microscopy, Scanning Electron Microscopy, Atomic Force Microscopy and X-Ray Diffraction. It contained both amorphous and crystalline phases. The electro-optical properties of the RT-grown sample were almost similar to those of the samples grown at higher temperatures. Finally, Scanning Transmission Electron Microscopy–Valence Electron Energy Loss Spectroscopy was used to derive locally dielectric properties which were compared with ellipsometry measurements in the 1.5–5.5 eV range using a Tauc–Lorentz model.

Viewing alternatives

Metrics

Item Actions

Export

You can export this page using these formats Digital Object Identifier - DOI