Characterisation of a CMOS charge transfer device for TDI imaging

Rushton, J.; Holland, A.; Stefanov, K. and Mayer, F. (2015). Characterisation of a CMOS charge transfer device for TDI imaging. Journal of Instrumentation, 10(3), article no. C03027.

DOI: https://doi.org/10.1088/1748-0221/10/03/C03027

URL: http://iopscience.iop.org/1748-0221/10/03/C03027

Abstract

The performance of a prototype true charge transfer imaging sensor in CMOS is investigated. The finished device is destined for use in TDI applications, especially Earth-observation, and to this end radiation tolerance must be investigated. Before this, complete characterisation is required. This work starts by looking at charge transfer inefficiency and then investigates responsivity using mean-variance techniques.

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About

• Item ORO ID
• 42484
• Item Type
• Journal Item
• ISSN
• 1748-0221
• Extra Information
• Part of 10th International Conference on Position Sensitive Detectors
  
  6 pp.
• Keywords
• TDI; CMOS; charge transfer; mean variance; photon transfer
• Academic Unit or School
• Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
  Faculty of Science, Technology, Engineering and Mathematics (STEM)
• Research Group
• Centre for Electronic Imaging (CEI)
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• Copyright Holders
• © 2015 IOP Publishing Ltd and Sissa Medialab srl
• Depositing User
• Joseph Rushton