Copy the page URI to the clipboard
Rushton, J.; Holland, A.; Stefanov, K. and Mayer, F.
(2015).
DOI: https://doi.org/10.1088/1748-0221/10/03/C03027
URL: http://iopscience.iop.org/1748-0221/10/03/C03027
Abstract
The performance of a prototype true charge transfer imaging sensor in CMOS is investigated. The finished device is destined for use in TDI applications, especially Earth-observation, and to this end radiation tolerance must be investigated. Before this, complete characterisation is required. This work starts by looking at charge transfer inefficiency and then investigates responsivity using mean-variance techniques.
Viewing alternatives
Download history
Metrics
Public Attention
Altmetrics from AltmetricNumber of Citations
Citations from DimensionsItem Actions
Export
About
- Item ORO ID
- 42484
- Item Type
- Journal Item
- ISSN
- 1748-0221
- Extra Information
-
Part of 10th International Conference on Position Sensitive Detectors
6 pp. - Keywords
- TDI; CMOS; charge transfer; mean variance; photon transfer
- Academic Unit or School
-
Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM) - Research Group
-
Centre for Electronic Imaging (CEI)
?? space ?? - Copyright Holders
- © 2015 IOP Publishing Ltd and Sissa Medialab srl
- Depositing User
- Joseph Rushton