Vacancy-oxygen defects in silicon: the impact of isovalent doping

Londos, C. A.; Sgourou, E. N.; Hall, D. and Chroneos, A. (2014). Vacancy-oxygen defects in silicon: the impact of isovalent doping. Journal of Materials Science: Materials in Electronics, 25(6) pp. 2395–2410.

DOI: https://doi.org/10.1007/s10854-014-1947-6

Abstract

Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail.

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