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Londos, C. A.; Sgourou, E. N.; Hall, D. and Chroneos, A.
(2014).
DOI: https://doi.org/10.1007/s10854-014-1947-6
Abstract
Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail.
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- Item ORO ID
- 40649
- Item Type
- Journal Item
- ISSN
- 1573-482X
- Academic Unit or School
-
Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation - Research Group
-
Centre for Electronic Imaging (CEI)
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- © 2014 Springer Science+Business Media
- Depositing User
- David Hall