Copy the page URI to the clipboard
Gow, Jason; Murray, Neil; Holland, Andrew and Burt, David
(2014).
DOI: https://doi.org/10.1109/TNS.2014.2298254
Abstract
Comparisons have been made of the relative degradation of charge transfer efficiency in n-channel and p-channel CCDs subjected to proton irradiation. The comparison described in this paper was made using e2v technologies plc. CCD204 devices fabricated using the same mask set. The device performance was compared over a range of temperatures using the same experimental arrangement and technique to provide a like-for-like comparison. The parallel transfer using the p-channel CCD was then optimized using a trap pumping technique to identify the optimal operating conditions at 153 K.
Viewing alternatives
Download history
Metrics
Public Attention
Altmetrics from AltmetricNumber of Citations
Citations from DimensionsItem Actions
Export
About
- Item ORO ID
- 39754
- Item Type
- Journal Item
- ISSN
- 0018-9499
- Keywords
- CCD; charge transfer inefficiency; p-channel; pocket/trap pumping; proton radiation damage
- Academic Unit or School
-
Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM) - Research Group
-
Centre for Electronic Imaging (CEI)
?? space ?? - Copyright Holders
- © 2014 IEEE
- Depositing User
- Jason Gow