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Murray, Neil J.; Burt, David J.; Hall, David and Holland, Andrew D.
(2013).
DOI: https://doi.org/10.1117/12.2024826
Abstract
Pocket-pumping is an established technique for identifying the locations of charge trapping sites within the transport channels of CCDs. Various parameters of the pumping process can be manipulated to increase the efficiency, or allow characterisation of the trap sites effective during nominal operating modes. A CCD273 was irradiated in a triangular region by protons to a 10 MeV equivalent fluence of 1.2E9 p cm2, ensuring a suitably low trap density for ease of automated trap recognition. X-rays of 5,898 eV were incident on the CCD above the region irradiated with the triangle, such that events could be analysed having passed through an increasing length of irradiated silicon and hence number of trapping sites. Here we present the relationship between the number of traps identified by pocket pumping within the parallel transport channels of a CCD273 and the amount of signal that is deferred by the trapping process during readout.
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About
- Item ORO ID
- 39015
- Item Type
- Conference or Workshop Item
- ISBN
- 0-8194-9710-X, 978-0-8194-9710-9
- ISSN
- 0277-786X
- Extra Information
-
UV/Optical/IR Space Telescopes and Instruments: Innovative Technologies and Concepts VI
Editors: Howard A. MacEwen, James B. Breckinridge
Proceedings of SPIE Vol.8860 - Keywords
- charge-coupled devices; signal attenuation; silicon; X-rays
- Academic Unit or School
-
Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM) - Research Group
-
Centre for Electronic Imaging (CEI)
?? space ?? - Copyright Holders
- © 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)
- Depositing User
- David Hall