Thermally induced decomposition of single-wall carbon nanotubes adsorbed on H/Si(111)

Hunt, Michael R. C.; Montalti, Massimo; Chao, Yimin; Krishnamurthy, Satheesh; Dhanak, Vinod R. and Šiller, Lidija (2002). Thermally induced decomposition of single-wall carbon nanotubes adsorbed on H/Si(111). Applied Physics Letters, 81(25), article no. 4847.

DOI: https://doi.org/10.1063/1.1530747

Abstract

The thermally driven reaction of carbon nanotubes with a silicon substrate is studied by photoemission spectroscopy and atomic force microscopy. Carbon nanotubes with a relatively high defect density are observed to decompose under reaction with silicon to form silicon carbide at temperatures (650±10 °C) substantially lower than the analogous reaction for adsorbed C60. The morphology of the resultant silicon carbide islands appears to reflect the morphology of the original nanotubes, suggesting a means by which SiC nanostrutures may be produced

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