Characteristics of silicon nanocrystals for photovoltaic applications

Moore, D.; Krishnamurthy, S.; Chao, Y.; Wang, Q.; Brabazon, D. and McNally, P. J. (2011). Characteristics of silicon nanocrystals for photovoltaic applications. Physica Status Solidi (A) Applications and Materials Science, 208(3) pp. 604–607.

DOI: https://doi.org/10.1002/pssa.201000381

URL: http://www.scopus.com/inward/record.url?eid=2-s2.0...

Abstract

Over the last decade the progress in amorphous and nanocrystalline silicon (nc-Si) for photovoltaic applications received significant interest in science and technology. Advances in the understanding of these novel materials and their properties are growing rapidly. In order to realise nc-Si in the solar cell, a thicker intrinsic layer is required. Due to the indirect band gap in the crystallites, the absorption coefficients of nc-Si are much lower. In this work we have used electrochemical etching techniques to produce silicon nanocrystals of the sizes 3-5 nm. Viable drop cast deposition of Si nanocrystals to increase the thickness without compromising the material properties was investigated by atomic force microscopy, optical microscopy, photoemission spectroscopy and optical absorption methods.

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