Point defect engineering strategies to suppress A-center formation in silicon

Chroneos, A.; Londos, C. A.; Sgourou, E. N. and Pochet, P. (2011). Point defect engineering strategies to suppress A-center formation in silicon. Applied Physics Letters, 99(24) p. 241901.

DOI: https://doi.org/10.1063/1.3666226

Abstract

We investigate the impact of tin doping on the formation of vacancy-oxygen pairs ( VO or A-centers) and their conversion to VO(2) clusters in electron-irradiated silicon. The experimental results are consistent with previous reports that Sn doping suppresses the formation of the A-center. We introduce a model to account for the observed differences under both Sn-poor and Sn-rich doping conditions. Using density functional theory calculations, we propose point defect engineering strategies to reduce the concentration of the deleterious A-centers in silicon. We predict that doping with lead, zirconium, or hafnium will lead to the suppression of the A-centers.

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About

• Item ORO ID
• 35253
• Item Type
• Journal Item
• ISSN
• 1077-3118
• Academic Unit or School
• Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
  Faculty of Science, Technology, Engineering and Mathematics (STEM)
• Copyright Holders
• © 2011 American Institute of Physics
• Depositing User
• Alexander Chroneos