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Chroneos, A.; Londos, C. A.; Sgourou, E. N. and Pochet, P.
(2011).
DOI: https://doi.org/10.1063/1.3666226
Abstract
We investigate the impact of tin doping on the formation of vacancy-oxygen pairs ( VO or A-centers) and their conversion to VO(2) clusters in electron-irradiated silicon. The experimental results are consistent with previous reports that Sn doping suppresses the formation of the A-center. We introduce a model to account for the observed differences under both Sn-poor and Sn-rich doping conditions. Using density functional theory calculations, we propose point defect engineering strategies to reduce the concentration of the deleterious A-centers in silicon. We predict that doping with lead, zirconium, or hafnium will lead to the suppression of the A-centers.
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About
- Item ORO ID
- 35253
- Item Type
- Journal Item
- ISSN
- 1077-3118
- Academic Unit or School
-
Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM) - Copyright Holders
- © 2011 American Institute of Physics
- Depositing User
- Alexander Chroneos