Diffusion of tin in germanium: a GGA+U approach

Tahini, H.; Chroneos, A.; Grimes, R. W. and Schwingenschlögl, U. (2011). Diffusion of tin in germanium: a GGA+U approach. Applied Physics Letters, 99(16) p. 162103.

DOI: https://doi.org/10.1063/1.3653472

URL: http://apl.aip.org/resource/1/applab/v99/i16/p1621...

Abstract

Density functional theory calculations are used to investigate the formation and diffusion of tin-vacancy pairs (SnV) in germanium (Ge). Depending upon the Fermi energy, SnV pairs can form in neutral, singly negative, or doubly negative charged states. The activation energies of diffusion, also as function of the Fermi energy, are calculated to lie between 2.48-3.65 eV, in agreement with and providing an interpretation of available experimental work.

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About

• Item ORO ID
• 35249
• Item Type
• Journal Item
• ISSN
• 1077-3118
• Extra Information
• 3 pp.
• Keywords
• density functional theory; diffusion; elemental semiconductors; Fermi level; germanium; gradient methods; tin; vacancies (crystal)
• Academic Unit or School
• Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
  Faculty of Science, Technology, Engineering and Mathematics (STEM)
• Copyright Holders
• © 2011 American Institute of Physics
• Depositing User
• Alexander Chroneos