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Chroneos, A. and Londos, C. A.
(2010).
DOI: https://doi.org/10.1063/1.3409888
URL: http://jap.aip.org/resource/1/japiau/v107/i9/p0935...
Abstract
An A-center is an oxygen interstitial atom near a lattice vacancy and is one of the most common impurity-defect pairs in Czochralski-grown silicon crystals. In the present study, density functional theory calculations have been used to predict the binding energies of A-centers that are at nearest neighbor (NN) and next NN sites to isovalent impurities (carbon, germanium, and tin) in silicon. Interestingly, we predict that the A-center is more bound in isovalent-doped and, in particular, tin-doped silicon. We calculate that most of the binding energy of these A-centers originates from the interaction between the isovalent atoms and the vacancies.
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About
- Item ORO ID
- 35201
- Item Type
- Journal Item
- ISSN
- 1089-7550
- Keywords
- A-centres; binding energy; carbon; crystal growth from melt; density functional theory; elemental semiconductors; germanium; impurity-defect interactions; semiconductor doping; silicon, tin; vacancies (crystal)
- Academic Unit or School
-
Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM) - Copyright Holders
- © 2010 American Institute of Physics
- Depositing User
- Alexander Chroneos