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Chroneos, Alexander; Kube, R. V.; Bracht, H.; Grimes, R. W. and Schwingenschlögl, U.
(2010).
DOI: https://doi.org/10.1016/j.cplett.2010.03.005
URL: http://www.sciencedirect.com/science/article/pii/S...
Abstract
Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, In(n)V(m). We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions.