Vacancy-indium clusters in implanted germanium

Chroneos, Alexander; Kube, R. V.; Bracht, H.; Grimes, R. W. and Schwingenschlögl, U. (2010). Vacancy-indium clusters in implanted germanium. Chemical Physics Letters, 490(1-3) pp. 38–40.

DOI: https://doi.org/10.1016/j.cplett.2010.03.005

URL: http://www.sciencedirect.com/science/article/pii/S...

Abstract

Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, In(n)V(m). We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions.

Viewing alternatives

Look up in Google Scholar

Metrics

Public Attention

Altmetrics from Altmetric

Number of Citations

Citations from Dimensions
No digital document available to download for this item

Item Actions

Export

About

CORE (COnnecting REpositories)

Recommendations