Fluorine codoping in germanium to suppress donor diffusion and deactivation

Chroneos, A.; Grimes, R. W. and Bracht, H. (2009). Fluorine codoping in germanium to suppress donor diffusion and deactivation. Journal of Applied Physics, 106(6), article no. 063707.

DOI: https://doi.org/10.1063/1.3224900

URL: http://jap.aip.org/resource/1/japiau/v106/i6/p0637...

Abstract

Electronic structure calculations are used to investigate the stability of fluorine-vacancy (F_n)V_m) clusters in germanium (Ge). Using mass action analysis, it is predicted that the F_nV_m clusters can remediate the concentration of free V considerably. Importantly, we find that F and P codoping leads to a reduction in the concentration of donor-vacancy (DV) pairs. These pairs are responsible for the atomic transport and the formation of D_nV clusters that lead to a deactivation of donor atoms. The predictions are technologically significant as they point toward an approach by which V-mediated donor diffusion and the formation of inactive D(n)V clusters can be suppressed. This would result in shallow and fully electrically active n-type doped regions in Ge-based electronic devices.

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About

• Item ORO ID
• 35188
• Item Type
• Journal Item
• ISSN
• 1089-7550
• Extra Information
• This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
• Keywords
• diffusion; electronic structure; elemental semiconductors; fluorine; germanium; phosphorus; semiconductor doping; vacancies (crystal)
• Academic Unit or School
• Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
  Faculty of Science, Technology, Engineering and Mathematics (STEM)
• Copyright Holders
• © 2009 American Institute of Physics
• Depositing User
• Alexander Chroneos