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Chroneos, A.; Grimes, R. W. and Bracht, H.
(2009).
DOI: https://doi.org/10.1063/1.3224900
URL: http://jap.aip.org/resource/1/japiau/v106/i6/p0637...
Abstract
Electronic structure calculations are used to investigate the stability of fluorine-vacancy (Fn)Vm) clusters in germanium (Ge). Using mass action analysis, it is predicted that the FnVm clusters can remediate the concentration of free V considerably. Importantly, we find that F and P codoping leads to a reduction in the concentration of donor-vacancy (DV) pairs. These pairs are responsible for the atomic transport and the formation of DnV clusters that lead to a deactivation of donor atoms. The predictions are technologically significant as they point toward an approach by which V-mediated donor diffusion and the formation of inactive D(n)V clusters can be suppressed. This would result in shallow and fully electrically active n-type doped regions in Ge-based electronic devices.