Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium

Chroneos, Alexander (2009). Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium. Journal of Applied Physics, 105(5), article no. 056101.

DOI: https://doi.org/10.1063/1.3086664

Abstract

Recent experimental studies demonstrate a significant germanium (Ge) substrate loss and consequently dopant loss even during low temperature annealing. Additionally, for phosphorous (P) implanted Ge the capping layer material affects P diffusion. Silicon nitride (Si₃N₄) capping is more efficient compared to silicon dioxide (SiO₂) capping, but an accumulation of P is observed at the Ge/Si₃N₄ interface. In the present study, the recent experimental evidence is evaluated and with the use of electronic structure simulations the formation of relevant defects is investigated. It is predicted that the formation of clusters containing nitrogen (N) and vacancies (V) can be related to the observed accumulation of P atoms near the Ge/Si₃N₄ interface.

Viewing alternatives

Metrics

Item Actions

Export

You can export this page using these formats Digital Object Identifier - DOI

About

• Item ORO ID
• 35181
• Item Type
• Journal Item
• ISSN
• 0021-8979
• Extra Information
• This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
• Academic Unit or School
• Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
  Faculty of Science, Technology, Engineering and Mathematics (STEM)
• Copyright Holders
• © 2009 American Institute of Physics
• Depositing User
• Alexander Chroneos