The vacancy in silicon: a critical evaluation of experimental and theoretical results

Bracht, Hartmut and Chroneos, Alexander (2008). The vacancy in silicon: a critical evaluation of experimental and theoretical results. Journal of Applied Physics, 104(7), article no. 076108.

DOI: https://doi.org/10.1063/1.2996284

Abstract

Recent experimental studies of Shimizu [Phys. Rev. Lett. 98, 095901 (2007)] revealed an activation enthalpy of 3.6 eV for the vacancy contribution to Si self-diffusion. Although this value seems to be in accurate agreement with recent theoretical results, it is at variance with experiments on vacancy-mediated dopant diffusion in Si. In the present study we review results from electronic structure calculations and conclude that the calculations are consistent with an activation enthalpy of 4.5-4.6 eV rather than 3.6 eV for the vacancy contribution to self-diffusion. Moreover, our calculations predict activation enthalpies of 4.45 and 3.81 eV for the vacancy-mediated diffusion of phosphorus and antimony, respectively, in good agreement with the most recent experimental results. (C) 2008 American Institute of Physics

Viewing alternatives

Download history

Metrics

Public Attention

Altmetrics from Altmetric

Number of Citations

Citations from Dimensions

Item Actions

Export

About