Copy the page URI to the clipboard
Bracht, Hartmut and Chroneos, Alexander
(2008).
DOI: https://doi.org/10.1063/1.2996284
Abstract
Recent experimental studies of Shimizu [Phys. Rev. Lett. 98, 095901 (2007)] revealed an activation enthalpy of 3.6 eV for the vacancy contribution to Si self-diffusion. Although this value seems to be in accurate agreement with recent theoretical results, it is at variance with experiments on vacancy-mediated dopant diffusion in Si. In the present study we review results from electronic structure calculations and conclude that the calculations are consistent with an activation enthalpy of 4.5-4.6 eV rather than 3.6 eV for the vacancy contribution to self-diffusion. Moreover, our calculations predict activation enthalpies of 4.45 and 3.81 eV for the vacancy-mediated diffusion of phosphorus and antimony, respectively, in good agreement with the most recent experimental results. (C) 2008 American Institute of Physics
Viewing alternatives
Download history
Metrics
Public Attention
Altmetrics from AltmetricNumber of Citations
Citations from DimensionsItem Actions
Export
About
- Item ORO ID
- 35171
- Item Type
- Journal Item
- ISSN
- 0021-8979
- Extra Information
- This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
- Academic Unit or School
-
Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM) - Copyright Holders
- © 2008 American Institute of Physics
- Depositing User
- Alexander Chroneos