Gap modification of atomically thin boron nitride by phonon mediated interactions

Hague, James P. (2012). Gap modification of atomically thin boron nitride by phonon mediated interactions. Nanoscale Research Letters, 7(1), article no. 303.

DOI: https://doi.org/10.1186/1556-276X-7-303

URL: http://www.nanoscalereslett.com/content/7/1/303

Abstract

A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phonon coupling λ = 1, indicating that a proportion of the measured BN bandgap may have a phonon origin.

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