Comparison of proton irradiated P-channel and N-channel CCDs

Gow, Jason P. D.; Murray, Neil J.; Holland, Andrew D.; Burt, David and Pool, Peter J. (2012). Comparison of proton irradiated P-channel and N-channel CCDs. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 686 pp. 15–19.

DOI: https://doi.org/10.1016/j.nima.2012.05.059

Abstract

Charge transfer inefficiency and dark current effects are compared for e2v technologies plc. p-channel and n-channel CCDs, both irradiated with protons. The p-channel devices, prior to their irradiation, exhibited twice the dark current and considerable worse charge transfer inefficiency (CTI) than a typical n-channel. The radiation induced increase in dark current was found to be comparable with n-channel CCDs, and its temperature dependence suggest the divacancy is the dominant source of thermally generated dark current pre and post irradiation. The factor of improvement in tolerance to radiation induced CTI varied by between 15 and 25 for serial CTI and 8 and 3 for parallel CTI, between −70 °C and −110 °C respectively.

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