Copy the page URI to the clipboard
Autès, G.; Mathon, J. and Umerski, A.
(2010).
DOI: https://doi.org/10.1103/PhysRevB.82.052405
Abstract
Almost a decade after the theoretical prediction of large tunneling magnetoresistance ratio (TMR) in epitaxial Fe/MgO/Fe tunneling junctions, there is still debate on how the TMR should behave as a function of MgO thickness for thick MgO. In this Brief Report we prove that the optimistic TMR grows indefinitely with MgO thickness, and in particular, that for large MgO thicknesses it must grow linearly. This rather surprising result is obtained using straightforward and completely general asymptotic analysis and is applicable to other tunneling junctions with MgO barrier. We give a simple formula for the growth of TMR and show that it is in excellent agreement with computational studies on realistic epitaxial systems. The formula also provides a valuable test to check that numerical studies are converging to the correct answer.
Viewing alternatives
Metrics
Public Attention
Altmetrics from AltmetricNumber of Citations
Citations from DimensionsItem Actions
Export
About
- Item ORO ID
- 22940
- Item Type
- Journal Item
- ISSN
- 1098-0121
- Project Funding Details
-
Funded Project Name Project ID Funding Body Not Set Not Set EPSRC (Engineering and Physical Sciences Research Council) - Academic Unit or School
-
Faculty of Science, Technology, Engineering and Mathematics (STEM) > Mathematics and Statistics
Faculty of Science, Technology, Engineering and Mathematics (STEM) - Copyright Holders
- © 2010 The American Physical Society
- Depositing User
- Andrey Umerski