A comparative study of proton radiation damage in p- and n-channel

Gow, J.; Murray, N. J.; Holland, A. D.; Burt, D. and Pool, P. (2009). A comparative study of proton radiation damage in p- and n-channel. In: Proceedings of SPIE: UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XVI, 3 Aug 2009, San Diego, USA.

DOI: https://doi.org/10.1117/12.826866

Abstract

It has been demonstrated that p-channel charge coupled devices (CCDs) are more radiation hard than conventional n-channel devices as they are not affected by the dominant electron trapping caused by the displacement damage defect the E-centre (phosphorus-vacancy). This paper presents a summary of the results from a comparative study of n-channel and p-channel CCDs each type operated under the same conditions. The CCD tested is the e2v technologies plc CCD47-20, a 1024 ? 1024 frame transfer device with a split output register, fabricated using the same mask to form n-channel and
p-channel devices. The p-channel devices were irradiated to a 10 MeV equivalent proton fluence of 4.07?1010 protons.cm-2 and 1.35?1011 protons.cm-2, an n-channel CCD was irradiated to a 10 MeV equivalent proton fluence of 1.68?109 protons.cm-2, however due to time constraints the n-channel device was not characterised, n-channel comparisons are instead made using a CCD02. As expected the p-channel CCD demonstrated improved radiation tolerance when compared to the n-channel CCD, at -90 ?C there is an approximate ×7 and ×15 improvement in tolerance to radiation induced parallel and serial CTI respectively for equivalent pixel geometries.

Viewing alternatives

Look up in Google Scholar

Download history

Metrics

Public Attention

Altmetrics from Altmetric

Number of Citations

Citations from Dimensions

Item Actions

Export

About

CORE (COnnecting REpositories)

Recommendations