Improving radiation tolerance in e2v CCD sensors

Burt, D.; Endicott, J.; Jerram, P.; Poole, P.; Morris, D.; Hussain, A. and Ezra, P. (2009). Improving radiation tolerance in e2v CCD sensors. In: Astronomical and Space Optical Systems (Warren, Penny G.; Marshall, Cheryl J.; Tyson, Robert K.; Lloyd-Hart, Michael; Heaney, James B. and Todd Kvamme, E. eds.), SPIE, 7439, article no. 743902.

DOI: https://doi.org/10.1117/12.825273

Abstract

e2v have been developing new approaches to mitigate against the effects of radiation damage in CCD sensors. The first of these is our "rad-hard" device technology, primarily developed to reduce the flat-band voltage shift following ionising radiation. With this a very significant improvement has been demonstrated, the flat-band shift reducing from typically 100-200 mV/kRad(Si) with standard devices to only 6 mV/kRad(Si), plus an associated reduction in the increase in surface dark signal. The rad-hard process thereby allows devices to be operated in environments with up to at least 500kRad total dose and/or with reduced shielding. Developments aimed at reducing the impact of proton radiation have included the manufacture of p-channel devices. Our initial data indicates that at -50°C the increase in charge transfer inefficiency is reduced by a factor of two times for parallel transfer and five times for serial transfer.

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