Strong Effect of Resonant Impurities on Landau-Level Quantization

Allison, G.; Mori, N.; Patanè, A.; Endicott, J.; Eaves, L.; Maude, D. K. and Hopkinson, M. (2006). Strong Effect of Resonant Impurities on Landau-Level Quantization. Physical Review Letters, 96(23), article no. 236802.

DOI: https://doi.org/10.1103/PhysRevLett.96.236802

Abstract

We investigate experimentally the effect of a random distribution of nitrogen (N) impurities on the Landau-level spectrum of a GaAs quantum well. Our magnetotunneling study reveals complex and nonequally spaced Landau levels and a quenching of the Landau states at a well-defined bias and electron energy which is resonant with that of the N atoms. Analysis of the magnetic field dependence of the tunnel current into the Landau levels of the well also provides quantitative information about the nonresonant component of the N-related scattering potential.

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