Effect of hydrostatic pressure on the fragmented conduction band structure of dilute Ga(AsN) alloys

Endicott, J.; Patanè, A.; Maude, D.; Eaves, L.; Hopkinson, M. and Hill, G. (2005). Effect of hydrostatic pressure on the fragmented conduction band structure of dilute Ga(AsN) alloys. Physical Review B, 72(4)

DOI: https://doi.org/10.1103/PhysRevB.72.041306

Abstract

We show that the combined use of magneto-tunneling spectroscopy and hydrostatic pressure P provides a powerful means of probing and strongly modifying the fragmented conduction band structure of dilute GaAs1−yNy quantum well layers. We demonstrate the strong effect of pressure on the GaAs1−yNy states over a wide range of energies and k vectors not accessible in previous optical investigations of interband transitions around k=0. Also, we report a large pressure coefficient for the effective mass, m, of the conduction electrons, ∂m∕∂P≈3×10−3me kbar−1, nearly an order of magnitude larger than that found in GaAs (∂m∕∂P≈4×10−4me kbar−1, where me is the electron mass in vacuum).

Viewing alternatives

Metrics

Public Attention

Altmetrics from Altmetric

Number of Citations

Citations from Dimensions

Item Actions

Export

About

Recommendations