Probing the N-induced states in dilute GaAsN alloys by magneto-tunnelling

Endicott, James; Ibáñez, J; Patanè, A; Eaves, L; Bissiri, M; Hopkinson, M; Airey, R; Hill, G; Gollub, D and Forchel, A (2004). Probing the N-induced states in dilute GaAsN alloys by magneto-tunnelling. Physica E: Low-dimensional Systems and Nanostructures, 21(2-4) pp. 892–896.

DOI: https://doi.org/10.1016/j.physe.2003.11.145

Abstract

We use a combination of magneto-tunnelling and photoluminescence spectroscopy techniques to explore the admixing of the extended GaAs conduction band states with the localised N-impurity states in dilute GaAs1−yNy quantum wells (QWs) incorporated in resonant tunnelling diodes. When y is increased from 0% to 0.08%, the current resonance due to electrons tunnelling through the lowest quasi-bound state of the QW splits into two main features due to electron tunnelling into the N-induced E− and E+ hybridised subbands of the GaAs1−yNy layer. These subbands have a very well-defined character even for a small N-content (∼0.08%) and have non-parabolic energy–momentum dispersions. A further increase of y smears out the resonances and quenches the current due to electron trapping on strongly localised N-levels.

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