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The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver

Golrokhi, Zahra; Marshall, Paul A.; Romani, Simon; Rushworth, Simon; Chalker, Paul R. and Potter, Richard J. (2017). The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver. Applied Surface Science, 399 pp. 123–131.

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Ultra-thin conformal silver films are the focus of development for applications such as anti-microbial surfaces, optical components and electronic devices. In this study, metallic silver films have been deposited using direct liquid injection thermal atomic layer deposition (ALD) using (hfac)Ag(1,5-COD) ((hexafluoroacetylacetonato)silver(I)(1,5-cyclooctadiene)) as the metal source and tertiary butyl hydrazine (TBH) as a co-reactant. The process provides a 23 °C wide ‘self-limiting’ ALD temperature window between 105 and 128 °C, which is significantly wider than is achievable using alcohol as a co-reactant. A mass deposition rate of ∼20 ng/cm2/cycle (∼0.18 Å/cycle) is observed under self-limiting growth conditions. The resulting films are crystalline metallic silver with a near planar film-like morphology which are electrically conductive. By extending the temperature range of the ALD window by the use of TBH as a co-reactant, it is envisaged that the process will be exploitable in a range of new low temperature applications.

Item Type: Journal Item
Copyright Holders: 2016 The Authors
ISSN: 0169-4332
Project Funding Details:
Funded Project NameProject IDFunding Body
Not SetNot SetEPSRC
Keywords: Atomic layer deposition; Self limiting; Silver thin films; Tertiary butyl hydrazine
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Item ID: 66805
Depositing User: Zahra Golrokhi
Date Deposited: 23 Sep 2019 10:36
Last Modified: 11 Oct 2019 13:16
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