Utilisation of JSR and BCB resists for the construction of gray scale microstructures

Psoma, Sotiria D. (2009). Utilisation of JSR and BCB resists for the construction of gray scale microstructures. Procedia Chemistry, 1(1) pp. 816–819.

DOI: https://doi.org/10.1016/j.proche.2009.07.203

Abstract

This paper reports on the use of two well-known photoresists, the JSR and BCB for the construction of gray scale structures which have a wide range of applications in the semiconductor/electronics industry. Reactive ion etching experiments were carried out in order to define the etching rate of the resist JSR and cyclotene using a combination of two different gases. Argon and Oxygen were used separately in order to determine the etching rate of the photoresist and the cyclotene by changing the following parameters: concentration, gas pressure and power of the RF unit. New reactive ion etching experiments were performed using combinations of the two gases in order to establish the optimum ratio of the two gases for accomplishing the desirable gray scale structures.

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