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Li, Sihua; Goolaup, Sarjoosing; Kwon, Jaesuk; Luo, Feilong; Gan, Weiliang and Lew, Wen Siang
(2017).
DOI: https://doi.org/10.1038/s41598-017-01079-7
Abstract
Spin-orbit torque (SOT) induced by electric current has attracted extensive attention as an efficient method of controlling the magnetization in nanomagnetic structures. SOT-induced magnetization reversal is usually achieved with the aid of an in-plane bias magnetic field. In this paper, we show that by selecting a film stack with weak out-of-plane magnetic anisotropy, field-free SOT-induced switching can be achieved in micron sized multilayers. Using direct current, deterministic bipolar magnetization reversal is obtained in Pt/[Co/Ni]2/Co/Ta structures. Kerr imaging reveals that the SOT-induced magnetization switching process is completed via the nucleation of reverse domain and propagation of domain wall in the system.
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About
- Item ORO ID
- 59850
- Item Type
- Journal Item
- ISSN
- 2045-2322
- Project Funding Details
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Funded Project Name Project ID Funding Body Competitive Research Programme (Non-volatile Magnetic Logic and Memory Integrated Circuit Devices) NRF-CRP9-2011-01 Singapore National Research Foundation, Prime Minister’s Office Industry-IHL Partnership Program NRF2015-IIP001-001 Not Set MOE-AcRF Tier 2 Grant MOE 2013-T2-2-017 Not Set - Academic Unit or School
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Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM) - Copyright Holders
- © 2017 The Authors
- Depositing User
- Vikram Goolaup