The Open UniversitySkip to content
 

Characterisation of a novel reverse-biased PPD CMOS image sensor

Stefanov, Konstantin; Clarke, Andrew; Ivory, James and Holland, Andrew (2017). Characterisation of a novel reverse-biased PPD CMOS image sensor. Journal of Instrumentation, 12(11), article no. C11009.

Full text available as:
[img]
Preview
PDF (Accepted Manuscript) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview
DOI (Digital Object Identifier) Link: https://doi.org/10.1088/1748-0221/12/11/C11009
Google Scholar: Look up in Google Scholar

Abstract

A new pinned photodiode (PPD) CMOS image sensor (CIS) has been developed and characterised. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is applicable to very thick sensitive volumes. Additional n-type implants under the pixel p-wells, called Deep Depletion Extension (DDE), have been added in order to eliminate the large parasitic substrate current that would otherwise be present in a normal device. The first prototype has been manufactured on a 18 μm thick, 1000 Ω .cm epitaxial silicon wafers using 180 nm PPD image sensor process at TowerJazz Semiconductor. The chip contains arrays of 10 μm and 5.4 μm pixels, with variations of the shape, size and the depth of the DDE implant. Back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v, and characterised together with the front-side illuminated (FSI) variants. The presented results show that the devices could be reverse-biased without parasitic leakage currents, in good agreement with simulations. The new 10 μm pixels in both BSI and FSI variants exhibit nearly identical photo response to the reference non-modified pixels, as characterised with the photon transfer curve. Different techniques were used to measure the depletion depth in FSI and BSI chips, and the results are consistent with the expected full depletion.

Item Type: Journal Item
Copyright Holders: 2017 IOP Publishing Ltd and Sissa Medialab
ISSN: 1748-0221
Extra Information: 11 p.
Keywords: ultraviolet photon detectors; visible photon detectors; infra-red photon detectors; detector modelling and simulations; CMOS image sensor; pinned photodiode (PPD); depletion depth; reverse bias
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Research Group: Centre for Electronic Imaging (CEI)
Space
Item ID: 52481
Depositing User: Konstantin Stefanov
Date Deposited: 27 Nov 2017 11:01
Last Modified: 02 May 2019 02:53
URI: http://oro.open.ac.uk/id/eprint/52481
Share this page:

Metrics

Altmetrics from Altmetric

Citations from Dimensions

Download history for this item

These details should be considered as only a guide to the number of downloads performed manually. Algorithmic methods have been applied in an attempt to remove automated downloads from the displayed statistics but no guarantee can be made as to the accuracy of the figures.

Actions (login may be required)

Policies | Disclaimer

© The Open University   contact the OU