The Open UniversitySkip to content
 

Evolution of proton-induced defects in a cryogenically irradiated p-channel CCD

Wood, Daniel; Hall, David; Gow, Jason; Murray, Neil; Stefanov, Konstantin and Holland, Andrew (2017). Evolution of proton-induced defects in a cryogenically irradiated p-channel CCD. In: 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS), IEEE, Piscataway, NJ.

Full text available as:
[img]
Preview
PDF (Version of Record) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (520kB) | Preview
URL: http://ieeexplore.ieee.org/document/8093129/
DOI (Digital Object Identifier) Link: https://doi.org/10.1109/RADECS.2016.8093129
Google Scholar: Look up in Google Scholar

Abstract

P-channel CCDs have been shown to display improved tolerance to radiation-induced charge transfer inefficiency (CTI) when compared to n-channel CCDs. This is attributed to the properties of the dominant charge-trapping defect species in p-channel silicon relative to the operating conditions of the CCD. However, precise knowledge of defect parameters is required in order to correct for any induced CTI. The method of single trap-pumping allows us to analyse the defect parameters to a degree of accuracy that cannot be achieved with other common defect analysis techniques such as deep-level transient spectroscopy (DLTS). We have analysed using this method the defect distribution in an e2v p-channel CCD204 irradiated with protons at cryogenic temperature (153K). The dominant charge trapping defects at these conditions have been identified as the donor level of the silicon divacancy and the carbon interstitial defect. The defect parameters are analysed both immediately post irradiation and following several subsequent room-temperature anneal phases. The evolution of the defect distribution over time and through each anneal phase provides insight into defect interactions and mobility post-irradiation. The results demonstrate the importance of cryogenic irradiation and annealing studies, with large variations seen in the defect distribution when compared to a device irradiated at room-temperature, which is the current standard procedure for radiation testing.

Item Type: Conference or Workshop Item
Copyright Holders: 2016 by the Institute of Electrical and Electronics Engineers
ISBN: 1-5090-4366-7, 978-1-5090-4366-8
Keywords: divacancy; CCD; p-channel; pocket pumping; radiation damage; Carbon; trap pumping
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Research Group: Centre for Electronic Imaging (CEI)
Space
Item ID: 52257
Depositing User: Daniel Wood
Date Deposited: 20 Nov 2017 11:50
Last Modified: 04 May 2019 18:51
URI: http://oro.open.ac.uk/id/eprint/52257
Share this page:

Metrics

Altmetrics from Altmetric

Citations from Dimensions

Download history for this item

These details should be considered as only a guide to the number of downloads performed manually. Algorithmic methods have been applied in an attempt to remove automated downloads from the displayed statistics but no guarantee can be made as to the accuracy of the figures.

Actions (login may be required)

Policies | Disclaimer

© The Open University   contact the OU