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The Influence of diffusion of fluorine compounds for silicon lateral etching

Verdonck, Partick; Goodyear, Alec and Braithwaite, Nicholas St John (2004). The Influence of diffusion of fluorine compounds for silicon lateral etching. Thin Solid Films, 459(1-2) pp. 141–144.

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In an earlier study, it was proposed that long-range surface transport of fluorine atoms could precede the eventual binding to a silicon atom. The rate of binding increases if the silicon is bombarded with high energy ions. In this study, the lateral etching of a silicon layer, sandwiched between two silicon dioxide layers, was studied in order to investigate and extend these hypotheses. The under etching of the silicon layer was higher for wafers which suffered ion bombardment, showing that this mechanism is important even for horizontal etching. At the same time, the thickness of the silicon layer was varied. In all cases, the thinner silicon layer etched much faster then the thicker layer, indicating that fluorine surface transport is much more important than re-emission for these processes. The etch rate increase with ion bombardment can be explained by the fact that part of the energy of the incoming ions is transferred to the fluorine compounds which are on the horizontal surfaces and that ion bombardment enhances the fluorine surface transport.

Item Type: Journal Article
ISSN: 0040-6090
Extra Information: Proceedings of the 8th European Vacuum Congress Berlin 2003, 23-26 June 2003, featuring the 8th European Vacuum Conference and 2nd Annual Conference of the German Vaccum Society.
Keywords: plasma processing and deposition; etching; silicon; fluorine
Academic Unit/Department: Mathematics, Computing and Technology > Engineering & Innovation
Mathematics, Computing and Technology
Science > Physical Sciences
Interdisciplinary Research Centre: Centre for Earth, Planetary, Space and Astronomical Research (CEPSAR)
Item ID: 4936
Depositing User: Users 6041 not found.
Date Deposited: 17 Jul 2006
Last Modified: 14 Jan 2016 16:10
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