The Open UniversitySkip to content

Formation of misfit dislocations in strained-layer GaAs/InxGa1–xAs/GaAs heterostructures during postfabrication thermal processing

Liu, X.W.; Hopgood, A.A.; Usher, B.F.; Wang, H. and Braithwaite, N.St.J. (2003). Formation of misfit dislocations in strained-layer GaAs/InxGa1–xAs/GaAs heterostructures during postfabrication thermal processing. Journal of Applied Physics, 94(12) pp. 7496–7501.

Full text available as:
PDF (Version of Record) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (586kB) | Preview
DOI (Digital Object Identifier) Link:
Google Scholar: Look up in Google Scholar


It is demonstrated that relaxation of GaAs/InxGa1–xAs/GaAs strained-layer heterostructures can be brought about by postfabrication thermal processing. Misfit dislocations are introduced into the structure during thermal processing, even though the thickness of the strained layer is well below the critical value predicted by the Matthews–Blakeslee model. The misfit dislocations are observed to be of both 60° mixed type and 90° pure edge type. As no relaxation occurs at the lower temperatures encountered during fabrication by molecular-beam epitaxy, it can be inferred that the critical condition for the formation of misfit dislocations is not only a function of strained-layer thickness and composition, but also of temperature. This observation cannot be accounted for by differential thermal expansion or diffusion across the strained-layer interfaces, but the temperature-dependent Peierls force may offer an explanation. The high temperature required to produce relaxation of these structures suggests that they are sufficiently thermally stable for most practical applications.

Item Type: Article
Copyright Holders: 2003 American Institute of Physics
ISSN: 0021-8979
Extra Information: This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Keywords: dislocations; heterostructures; interfaces; semiconductor lasers
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM)
Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Interdisciplinary Research Centre: Centre for Earth, Planetary, Space and Astronomical Research (CEPSAR)
Item ID: 4913
Depositing User: Users 6041 not found.
Date Deposited: 13 Jul 2006
Last Modified: 29 Nov 2016 21:29
Share this page:


Scopus Citations

Download history for this item

These details should be considered as only a guide to the number of downloads performed manually. Algorithmic methods have been applied in an attempt to remove automated downloads from the displayed statistics but no guarantee can be made as to the accuracy of the figures.

▼ Automated document suggestions from open access sources

Actions (login may be required)

Policies | Disclaimer

© The Open University   + 44 (0)870 333 4340