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Fully Depleted Pinned Photodiode CMOS Image Sensor With Reverse Substrate Bias

Stefanov, Konstantin D.; Clarke, Andrew S. and Holland, Andrew D. (2017). Fully Depleted Pinned Photodiode CMOS Image Sensor With Reverse Substrate Bias. IEEE Electron Device Letters, 38(1) pp. 64–66.

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A new pixel design using fully depleted pinned photodiode (PPD) in a 180 nm CMOS image sensor (CIS) process has been developed and the first experimental results from a test chip are presented. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is applicable to very thick sensitive volumes. Additional n-type implants under the in-pixel p-wells have been added to the manufacturing process in order to eliminate the large parasitic substrate current that would otherwise be present in a normal device. The new design shows the same electro-optical performance as the PPD pixel it is based on, and can be fully depleted without significant leakage currents. This development has the potential to greatly increase the quantum efficiency of scientific PPD CIS at near-infrared and soft X-ray wavelengths.

Item Type: Journal Item
Copyright Holders: 2016 IEEE
ISSN: 1558-0563
Project Funding Details:
Funded Project NameProject IDFunding Body
CMOS Image Sensors with High Quantum EfficiencyRP10G0348A01UK Space Agency (UKSA)
Keywords: CMOS image sensor (CIS); pinned photodiode (PPD); full depletion; reverse bias
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Research Group: Centre for Electronic Imaging (CEI)
Item ID: 48085
Depositing User: Konstantin Stefanov
Date Deposited: 09 Jan 2017 10:00
Last Modified: 07 May 2019 23:39
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