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Validation of NIEL for >1MeV electrons in silicon using the CCD47-20

Dryer, B.; Smith, P.; Nuns, T.; Murray, N.; Stefanov, K. D.; Gow, J. P. D.; Burgon, R.; Hall, D. J. and Holland, A. D. (2016). Validation of NIEL for >1MeV electrons in silicon using the CCD47-20. In: High Energy, Optical, and Infrared Detectors for Astronomy VII, Proceedings of SPIE, SPIE, Bellingham, WA, article no. 9915-99.

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For future space missions that are visiting hostile electron radiation environments, such as ESA’s JUICE mission, it is important to understand the effects of electron irradiation on silicon devices. This paper outlines a study to validate and improve upon the Non-Ionising Energy Loss (NIEL) model for high energy electrons in silicon using Charge Coupled Devices (CCD), CMOS Imaging Sensors (CIS) and PIPS photodiodes. Initial results of radiation effects in an e2v technologies CCD47-20 after irradiation to 10 krad of 1 MeV electrons are presented with future results and analysis to be presented in future publications.

Item Type: Conference or Workshop Item
Copyright Holders: 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
ISBN: 1-5106-0209-7, 978-1-5106-0209-0
ISSN: 1996-756X
Keywords: electrons; silicon; charge-coupled devices; optical sensors; photodiodes; radiation; radiation effects
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Research Group: Centre for Electronic Imaging (CEI)
Item ID: 47679
Depositing User: Benjamin Dryer
Date Deposited: 04 Nov 2016 11:47
Last Modified: 01 May 2019 20:19
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