The Open UniversitySkip to content
 

A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD

Wood, D.; Hall, D.; Gow, J. P. D. and Holland, A. (2016). A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD. SPIE Proceedings: High Energy, Optical, and Infrared Detectors for Astronomy VII, 9915

Full text available as:
[img]
Preview
PDF (Accepted Manuscript) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview
DOI (Digital Object Identifier) Link: https://doi.org/10.1117/12.2231682
Google Scholar: Look up in Google Scholar

Abstract

Radiation damage effects are problematic for space-based detectors. Highly energetic particles, predominantly from the sun can damage a detector and reduce its operational lifetime. For an image sensor such as a Charge-Coupled Device (CCD) impinging particles can potentially displace silicon atoms from the CCD lattice, creating defects which can trap signal charge and degrade an image through smearing. This paper presents a study of one energy level of the silicon divacancy defect using the technique of single trap-pumping on a proton irradiated n-channel CCD. The technique allows for the study of individual defects at a sub-pixel level, providing highly accurate data on defect parameters. Of particular importance when concerned with CCD performance is the emission time-constant of a defect level, which is the time-scale for which it can trap a signal charge. The trap-pumping technique is a direct probe of individual defect emission time-constants in a CCD, allowing for them to be studied with greater precision than possible with other defect analysis techniques such as deep-level transient spectroscopy on representative materials.

Item Type: Journal Item
Copyright Holders: 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
ISSN: 0277-786X
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Research Group: Centre for Electronic Imaging (CEI)
Space
Item ID: 47262
Depositing User: Daniel Wood
Date Deposited: 28 Sep 2016 11:14
Last Modified: 03 May 2019 17:18
URI: http://oro.open.ac.uk/id/eprint/47262
Share this page:

Metrics

Altmetrics from Altmetric

Citations from Dimensions

Download history for this item

These details should be considered as only a guide to the number of downloads performed manually. Algorithmic methods have been applied in an attempt to remove automated downloads from the displayed statistics but no guarantee can be made as to the accuracy of the figures.

Actions (login may be required)

Policies | Disclaimer

© The Open University   contact the OU