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Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K

Gow, Jason P. D.; Wood, Daniel; Murray, Neil; Burt, David; Hall, David J.; Dryer, Ben and Holland, Andrew D. (2016). Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K. Journal of Astronomical Telescopes, Instruments, and Systems, 2(2) 026001.

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The displacement damage hardness that can be achieved using p-channel charge-coupled devices (CCD) was originally demonstrated in 1997, and since then a number of other studies have demonstrated an improved tolerance to radiation-induced CTI when compared to n-channel CCDs. A number of recent studies have also shown that the temperature history of the device after the irradiation impacts the performance of the detector, linked to the mobility of defects at different temperatures. This study describes the initial results from an e2v technologies p-channel CCD204 irradiated at 153 K with a 10 MeV equivalent proton fluences of 1.24×109 and 1.24×1011 protons cm-2. The dark current, cosmetic quality and the number of defects identified using trap pumping immediately were monitored after the irradiation for a period of 150 hours with the device held at 153 K and then after different periods of time at room temperature. The device also exhibited a flatband voltage shift of around 30 mV / krad, determined by the reduction in full well capacity.

Item Type: Journal Item
Copyright Holders: 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
ISSN: 2329-4124
Project Funding Details:
Funded Project NameProject IDFunding Body
P-Channel CCD performance characterisation and radiation testingTEC-MME/2012/298ESA
Keywords: Charge-coupled devices; Radiation; Sensors; Electronic imaging
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Research Group: Centre for Electronic Imaging (CEI)
Item ID: 47002
Depositing User: Jason Gow
Date Deposited: 11 Aug 2016 15:40
Last Modified: 02 May 2019 09:03
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