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CMOS image sensor

Stefanov, Konstantin (2015). CMOS image sensor. E2V Technologies (UK) Limited, EP2919270 A1.

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Abstract

A CMOS image sensor 101 comprises an active layer 11 of a first conductivity type arranged to be reversed biased and a pixel 20 comprising a photosensitive element comprising a well 22 of a second conductivity type and a well 21 of the first conductivity type containing active CMOS elements for reading and resetting the photosensitive element. The CMOS image sensor further comprises a doped buried layer 111 of the second conductivity type in the active layer beneath the well of the first conductivity type. The buried layer is arranged to extend a depletion region below the well of the second conductivity type also below the well of the first conductivity type.

Item Type: Patent
Copyright Holders: 2015 Konstantin Stefanov
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Research Group: Centre for Electronic Imaging (CEI)
Space
Item ID: 44682
Depositing User: Konstantin Stefanov
Date Deposited: 02 Nov 2015 10:10
Last Modified: 14 Dec 2018 16:36
URI: http://oro.open.ac.uk/id/eprint/44682
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