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Initial results from a cryogenic proton irradiation of a p-channel CCD

Gow, J. P. D.; Wood, D.; Burt, D.; Hall, D. J.; Dryer, B. J.; Holland, A. D. and Murray, N. J. (2015). Initial results from a cryogenic proton irradiation of a p-channel CCD. In: UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XIX, article no. 96010F.

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The displacement damage hardness that can be achieved using p-channel charge coupled devices (CCD) was originally demonstrated in 1997 and since then a number of other studies have demonstrated an improved tolerance to radiation-induced CTI when compared to n-channel CCDs. A number of recent studies have also shown that the temperature history of the device after the irradiation impacts the performance of the detector, linked to the mobility of defects at different temperatures. This study describes the initial results from an e2v technologies p-channel CCD204 irradiated at 153 K with a 10 MeV equivalent proton fluences of 1.24×109 and 1.24×1011 The number of defects identified using trap pumping, dark current and cosmetic quality immediately after irradiation and over a period of 150 hours after the irradiation with the device held at 153 K and then after different periods of time at room temperature are described. The device also exhibited a flatband voltage shift of around 30 mV per krad, determined by the reduction in full well capacity.

Item Type: Conference or Workshop Item
Copyright Holders: 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
ISSN: 0277-786X
Keywords: charge-coupled devices; sensors; CCD; p-channel; cryogenic irradiation; proton radiation damage
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Research Group: Centre for Electronic Imaging (CEI)
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Item ID: 44329
Depositing User: Jason Gow
Date Deposited: 11 Sep 2015 08:28
Last Modified: 08 Dec 2018 14:04
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