The Open UniversitySkip to content

Fullerene derivative based spin-on-carbon hard masks for advanced lithographic applications

Frommhold, A.; Brown, A. G.; Lada, T.; Bowen, J. and Robinson, A. P. G. (2015). Fullerene derivative based spin-on-carbon hard masks for advanced lithographic applications. In: Fullerenes – Past, Present and Future, 15-16 Jul 2015, London, UK.

Full text available as:
PDF (Version of Record) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview
Google Scholar: Look up in Google Scholar


Spin-on-Carbon (SoC) hardmasks are an increasingly key component of the microchip fabrication process. Progress in lithographic resolution has made the adoption of extremely thin photoresist films necessary for the fabrication of “1x nanometre” linewidth structures to prevent issues such as resist collapse during development. While there are resists with high etch durability, ultimately etch depth is limited by resist thickness. A possible solution is the use of a multilayer etch stack. This allows for considerable increase in aspect ratio. For the organic hard mask base layer, a carbon-rich material is preferred as carbon possesses a high etch resistance in silicon plasma etch processes. A thin silicon topcoat deposited on the carbon film can be patterned with a thin photoresist film without feature collapse, and the pattern transferred to the underlying carbon film by oxygen plasma. This produces high aspect ratio carbon structures suitable for substrate etching. In terms of manufacturability it is beneficial to spin coat the carbon layer instead of using chemical vapor deposition, but the presence of carbon-hydrogen bonds in typical spin-on-carbon leads to line wiggling during the etch (a significant problem at smaller feature sizes). We have developed a fullerene based SoC and reported on material characterization. The materials low Ohnishi number provides high etch durability and the low hydrogen level allows for high resolution etching without wiggling. Here recent advances in material development and work towards commercialization of the materials are presented and the use of the materials in etch stacks is demonstrated.

Item Type: Conference or Workshop Item
Copyright Holders: 2015 The Authors
Extra Information: Celebrating the 30th anniversary of Buckminster Fullerene
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Related URLs:
Item ID: 43791
Depositing User: James Bowen
Date Deposited: 23 Jul 2015 09:23
Last Modified: 04 May 2019 03:15
Share this page:

Download history for this item

These details should be considered as only a guide to the number of downloads performed manually. Algorithmic methods have been applied in an attempt to remove automated downloads from the displayed statistics but no guarantee can be made as to the accuracy of the figures.

Actions (login may be required)

Policies | Disclaimer

© The Open University   contact the OU