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Structural, electrical and optical properties of Si-doped ZnO thin films grown by pulsed laser deposition

Fereshteh-Saniee, Nessa; Abell, J. Stuart and Bowen, James (2009). Structural, electrical and optical properties of Si-doped ZnO thin films grown by pulsed laser deposition. In: First International Conference on Multifunctional, Hybrid and Nanomaterials, 15-19 March 2009, Tours, France.

URL: https://www.academia.edu/9828069/Structural_electr...
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Abstract

We report here the synthesis of silicon doped zinc oxide (2 wt.% SiO2-ZnO) thin films by Pulsed Laser Deposition (PLD) with comparable electrical and optical properties to Indium Tin Oxide (ITO). ZnO is a candidate for electrode in flat panel displays including organic light-emitting diodes and windows in solar cells due to its combined properties. Unlike the more commonly used ITO, ZnO is non-toxic, inexpensive and abundant. The optimised film, deposited at 300˚C and an oxygen pressure of 5 mTorr, had a resistivity of 4.6 ×10-4 Ωcm and a transmittance of 92%.

Item Type: Conference or Workshop Item
Copyright Holders: 2009 The Authors
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
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Item ID: 43425
Depositing User: James Bowen
Date Deposited: 19 Jun 2015 08:37
Last Modified: 10 Nov 2016 17:18
URI: http://oro.open.ac.uk/id/eprint/43425
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