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Microstructure and dielectric function modelling by spectroscopic ellipsometry and energy electron loss spectroscopy of In2O3:Sn thin films

Giusti, Gael; Bowen, James; Abell, J. Stuart and Jones, Ian P. (2010). Microstructure and dielectric function modelling by spectroscopic ellipsometry and energy electron loss spectroscopy of In2O3:Sn thin films. In: Frontiers in EELS, 11-12 March 2010, Vienna, Austria.

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Abstract

Indium tin oxide (ITO) is a semiconducting material combining high conductivity and high transparency in the visible range. It is the most widely used transparent conducting oxide in applications such as flat panel displays. In this work, ITO thin films were deposited by pulsed laser deposition (PLD) onto transparent glass substrates. The substrate temperature and oxygen pressure during deposition were controlled to generate a variety of microstructures and electro-optical properties. Similar film thicknesses were used to avoid any change of carrier concentration. The dielectric function and complex refractive index were derived using spectroscopic ellipsometry and electron energy loss spectroscopy.

Item Type: Conference or Workshop Item
Copyright Holders: 2010 The Authors
Keywords: thin films; transparent conductive materials; ITO; tin doped indium oxide; ellipsometry; electron energy loss spectroscopy (EELS); pulsed laser deposition (PLD); spectroscopic ellipsometry
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
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Item ID: 43421
Depositing User: James Bowen
Date Deposited: 18 Jun 2015 09:32
Last Modified: 15 Nov 2016 16:45
URI: http://oro.open.ac.uk/id/eprint/43421
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