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Microstructure–property relationships in thin film ITO

Giusti, G.; Tian, L.; Jones, I. P..; Abell, J. S. and Bowen, J. (2009). Microstructure–property relationships in thin film ITO. Thin Solid Films, 518(4) pp. 1140–1144.

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Polycrystalline tin-doped indium oxide (ITO) thin films were prepared by pulsed laser deposition (PLD) with an ITO (In2O3-10 wt.% SnO2) target and deposited on borosilicate glass substrates. By changing independently the deposition temperature and the oxygen pressure, a variety of microstructures were deposited. These different microstructures were mainly investigated not only by transmission electron microscopy (TEM) with cross-section and plan-view electron micrographs, but also by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction. Composition changes in ITO thin films grown under different deposition conditions were characterized by energy dispersive X-ray spectroscopy (EDX). The optical and electrical properties were studied respectively by UV-visible spectrophotometry and a four-point probe. The best compromise in terms of high transmittance (T) in the visible range and low resistivity (ρ) was obtained for films deposited between 0.66 and 2Pa oxygen pressure (PO2) at 200 °C substrate temperature (Ts). The influence of PO2 and Tson the microstructure and ITO film properties is discussed.

Item Type: Journal Item
Copyright Holders: 2009 Elsevier B.V.
ISSN: 0040-6090
Keywords: indium tin oxide; pulsed laser deposition; microstructure; transmission electron microscopy; crystallization
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
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Item ID: 43194
Depositing User: James Bowen
Date Deposited: 10 Jun 2015 15:20
Last Modified: 07 Dec 2018 10:31
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