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Dielectric properties of pulsed-laser deposited indium tin oxide thin films

Giusti, G.; Bowen, J.; Ramasse, Q.; Rey, G.; Blackburn, E.; Tian, L.; Jones, I. P. and Abell, J. S. (2012). Dielectric properties of pulsed-laser deposited indium tin oxide thin films. Thin Solid Films, 524 pp. 249–256.

DOI (Digital Object Identifier) Link: https://doi.org/10.1016/j.tsf.2012.09.053
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Abstract

Polycrystalline tin-doped indium oxide (ITO) thin films were prepared by Pulsed Laser Deposition with an ITO (In2O3-10 wt.% SnO2) ceramic target and deposited on transparent borosilicate glass substrates between room temperature (RT) and 400 °C. The RT grown specimen was structurally investigated by Transmission Electron Microscopy, Scanning Electron Microscopy, Atomic Force Microscopy and X-Ray Diffraction. It contained both amorphous and crystalline phases. The electro-optical properties of the RT-grown sample were almost similar to those of the samples grown at higher temperatures. Finally, Scanning Transmission Electron Microscopy–Valence Electron Energy Loss Spectroscopy was used to derive locally dielectric properties which were compared with ellipsometry measurements in the 1.5–5.5 eV range using a Tauc–Lorentz model.

Item Type: Journal Item
Copyright Holders: 2012 Elsevier B.V.
ISSN: 0040-6090
Keywords: STEM-VEELS; ellipsometry; ITO; dielectric function; pulsed-laser deposition; microstructure
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
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Item ID: 43173
Depositing User: James Bowen
Date Deposited: 01 Jun 2015 08:18
Last Modified: 10 Nov 2016 17:18
URI: http://oro.open.ac.uk/id/eprint/43173
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